金士頓HX426C16FB3K2/16 16GB (8GB x 2 pcs.)DDR4-2666 桌上型記憶體/072620
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- HX426C16FB2K2/16 16GB (8GB 1G x 64-Bit x 2 pcs.) DDR4-2666 CL16 288-Pin DIMM
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金士頓HX426C16FB2K2/16 16GB (8GB x 2 pcs.)DDR4-2666 桌上型記憶體
DESCRIPTION
Document No. 4808017-001.A00 06/09/17 Page 1
SPECIFICATIONS
*Power will vary depending on the SDRAM used.
HX426C16FB2K2/16
16GB (8GB 1G x 64-Bit x 2 pcs.)
DDR4-2666 CL16 288-Pin DIMM
Continued >>
kingston.com/hyperx
FEATURES
HyperX HX426C16FB2K2/16 is a kit of two 1G x 64-bit (8GB)
DDR4-2666 CL16 SDRAM (Synchronous DRAM) 1Rx8, memory
module, based on eight 1G x 8-bit FBGA components per module.
Each module kit supports Intel® Extreme Memory Profiles
(Intel® XMP) 2.0. Total kit capacity is 16GB. Each module has
been tested to run at DDR4-2666 at a low latency timing of 16-18-18
at 1.2V. Additional timing parameters are shown in the
Plug-N-Play (PnP) Timing Parameters section below. The
JEDEC standard electrical and mechanical specifications are
as follows:
CL(IDD)
Row Cycle Time (tRCmin)
Refresh to Active/Refresh
Command Time (tRFCmin)
Row Active Time (tRASmin)
Maximum Operating Power
UL Rating
Operating Temperature
Storage Temperature
16 cycles
45.75ns(min.)
350ns(min.)
29.25ns(min.)
TBD W*
94 V - 0
0o
C to +85o
C
-55o
C to +100o
C
JEDEC/XMP TIMING PARAMETERS
• JEDEC/PnP: DDR4-2666 CL16-18-18 @1.2V
• XMP Profile #1: DDR4-2666 CL16-18-18 @1.2V
• Power Supply: VDD = 1.2V Typical
• VDDQ = 1.2V Typical
• VPP - 2.5V Typical
• VDDSPD = 2.25V to 3.6V
• On-Die termination (ODT)
• 16 internal banks; 4 groups of 4 banks each
• Bi-Directional Differential Data Strobe
• 8 bit pre-fetch
• Burst Length (BL) switch on-the-fly BL8 or BC4(Burst Chop)
• Height 1.340” (34.04mm), w/heatsink